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BD115 - 0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.

BD115_8280017.PDF Datasheet

Part No.

BD115

Description

0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.

File Size

186.87K / 3 Page

Maker

Continental Device India Limited

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(CHINA HK & SZ)
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Part: BD10KA5FP-E2

Maker: Rohm Semiconductor

Pack: ETC

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